BF170 Todos los transistores

 0.1. Size:102K  motorola
 mmbf170lt1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti

 0.2. Size:98K  motorola
 mmbf170lt1rev2d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF170LT1/D TMOS FET Transistor DRAIN 3 MMBF170LT1 N Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage VDGS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repeti

 0.3. Size:277K  philips
 pmbf170-03.pdf

PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PMBF170 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

 0.4. Size:1298K  fairchild semi
 bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf

March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-s

 0.5. Size:374K  nxp
 pmbf170.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.6. Size:126K  diodes
 mmbf170.pdf

MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020C Fast Swi

 0.7. Size:77K  onsemi
 mmbf170lt1-d.pdf

MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http //onsemi.com Pb-Free Packages are Available 500 mA, 60 V MAXIMUM RATINGS RDS(on) = 5 W Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc SOT-23 CASE 318 Gate-Source Voltage STYLE 21 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Curre

 0.8. Size:3674K  onsemi
 bs170 mmbf170.pdf

 0.9. Size:98K  onsemi
 mmbf170l nvbf170l.pdf

MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N-Channel SOT-23 Features NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 http //onsemi.com Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit SOT-23 Drain-Source Voltage

 0.10. Size:205K  utc
 umbf170.pdf

UNISONIC TECHNOLOGIES CO., LTD UMBF170 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 0.11. Size:933K  slkor
 mmbf170l.pdf

MMBF170L N-Channel Enhancement Mode Field Effect Transistor Features Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance ESD protected up to 2KV Marking Code 6Z 1.G 2.S 3.D SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Cu

 0.12. Size:378K  cn shikues
 mmbf170.pdf

N-Channel Enhancement Mode MOSFET Features SOT-23 Surface-mounted package Advanced trench cell design Extremely low threshold voltage ESD protected ( HBM > 2KV ) Quick reference BV 60 V Ptot 0.83 W ID 0.5 A Top View RDS(ON) 3 @ VGS = 10 V 1 Gate(G) 2 Source(S) 3 Drain(D) RDS(ON) 4 @ VGS = 4.5 V Limiting Val

 0.13. Size:1611K  cn vbsemi
 mmbf170lt1g.pdf

MMBF170LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G