BF493P2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF493P2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 1.6
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar BF493P2
BF493P2
Datasheet (PDF)
9.1. Size:81K motorola
bf493srev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current
9.2. Size:134K motorola
pbf493rs.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF493RS/DHigh Voltage TransistorsPNP SiliconPBF493RSCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Cu
9.3. Size:123K motorola
pbf493re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF493/DHigh Voltage TransistorsPNP Silicon PBF493PBF493SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector
9.4. Size:108K motorola
bf493sre.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current
9.5. Size:58K onsemi
bf493s-d.pdf
BF493SHigh Voltage TransistorPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO -350 Vdc2BASECollector-Base Voltage VCBO -350 VdcEmitter-Base Voltage VEBO -6.0 Vdc1Collector Current - Continuous IC -500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDera
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