BF869EA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF869EA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.6 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO236

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BF869EA datasheet

 9.1. Size:64K  philips
 bf869 bf871 3.pdf pdf_icon

BF869EA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF470; BF472 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS 2 Class-B

 9.2. Size:63K  philips
 bf869 bf871 1.pdf pdf_icon

BF869EA

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF869; BF871 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF869; BF871 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in class-B video o

 9.3. Size:48K  philips
 bf869 bf871.pdf pdf_icon

BF869EA

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF869; BF871 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF869; BF871 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in class-B video output stages in colour t

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