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BF869S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF869S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO202

 Búsqueda de reemplazo de transistor bipolar BF869S

 

BF869S Datasheet (PDF)

 9.1. Size:64K  philips
bf869 bf871 3.pdf

BF869S
BF869S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF470; BF472PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF470; BF472FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS2 Class-B

 9.2. Size:63K  philips
bf869 bf871 1.pdf

BF869S
BF869S

DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF869; BF871NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF869; BF871FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in class-B video o

 9.3. Size:48K  philips
bf869 bf871.pdf

BF869S
BF869S

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D067BF869; BF871NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistors BF869; BF871FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in class-B video output stages in colourt

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