BFG194 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG194
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5000 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar BFG194
BFG194 Datasheet (PDF)
bfg194.pdf
BFG 194PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFG 194 BFG194 Q62702-F1321 1 = E 2 = B 3 = E 4 = C SOT-223Maximum RatingsParam
bfg197 bfg197x bfg197xr series 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG197; BFG197/X; BFG197/XRNPN 7 GHz wideband transistor1995 Sep 13Product specificationSupersedes data of November 1992File under discrete semiconductors, SC14Philips Semiconductors Product specificationBFG197; BFG197/X;NPN 7 GHz wideband transistorBFG197/XRFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureBF
bfg198.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG198NPN 8 GHz wideband transistorProduct specification 1995 Sep 12NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFG198DESCRIPTION PINNINGNPN planar epitaxial transistor in a PIN DESCRIPTIONplastic SOT223 envelope, intended fpage41 emitterfor wideband amplifier applications. 2 baseThe device features a
bfg198 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG198NPN 8 GHz wideband transistor1995 Sep 12Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFG198DESCRIPTION PINNINGNPN planar epitaxial transistor in aPIN DESCRIPTIONplastic SOT223 envelope, intended age41 emitterfor wideband amplifier applic
bfg193.pdf
BFG 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFG 193 BFG193 Q62702-F1291 1 = E 2 = B 3 = E 4 = C SOT-223Maximum RatingsParameter Symbol Values Un
bfg196.pdf
BFG 196NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configurat
bfg19s.pdf
BFG 19SNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA CECC-type available: CECC 50 002/259ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFG 19S BFG19S Q62702-F1359 1
bfg193.pdf
isc Silicon NPN RF Transistor BFG193DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 = 13.5 dB TYP. @V = 8 V,I = 30 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
