BFN19 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFN19

Código: DH

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT89

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BFN19 datasheet

 ..1. Size:138K  siemens
 bfn17 bfn19.pdf pdf_icon

BFN19

PNP Silicon High-Voltage Transistors BFN 17 BFN 19 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types BFN 16, BFN 18 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BFN 17 DG Q62702-F884 B C E SOT-89 BFN 19 DH Q62702-F1057 Maximum Ratings

 ..2. Size:12K  diodes
 bfn19.pdf pdf_icon

BFN19

SOT89 PNP SILICON PLANAR BFN19 HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 C COMPLEMENTARY TYPE - BFN18 PARTMARKING DETAIL - DH E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -500 mA Continuous Collector Current IC -200 mA Base Current

 ..3. Size:523K  infineon
 bfn19.pdf pdf_icon

BFN19

BFN19 PNP Silicon High-Voltage Transistors 1 Suitable for video output stages in TV sets 2 and switching power supplies 3 2 High breakdown voltage Low collector-emitter saturation voltage Complementary types BFN18 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BFN19 DH SOT89 1=B 2=C 3=E Maximum

Otros transistores... BFJ78, BFJ79, BFJ92, BFJ93, BFJ98, BFN16, BFN17, BFN18, 2SC4793, BFN20, BFN21, BFN22, BFN22R, BFN23, BFN23R, BFN24, BFN25