BFN19 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFN19
Código: DH
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar BFN19
BFN19 Datasheet (PDF)
bfn17 bfn19.pdf
PNP Silicon High-Voltage Transistors BFN 17BFN 19 Suitable for video output stages in TV setsand switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN 16, BFN 18 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BFN 17 DG Q62702-F884 B C E SOT-89BFN 19 DH Q62702-F1057Maximum Ratings
bfn19.pdf
SOT89 PNP SILICON PLANARBFN19HIGH VOLTAGE TRANSISTORISSUE 3 - JANUARY 1996 CCOMPLEMENTARY TYPE - BFN18PARTMARKING DETAIL - DHECBABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -300 VCollector-Emitter Voltage VCEO -300 VEmitter-Base Voltage VEBO -5 VPeak Pulse Current ICM -500 mAContinuous Collector Current IC -200 mABase Current
bfn19.pdf
BFN19PNP Silicon High-Voltage Transistors1 Suitable for video output stages in TV sets2 and switching power supplies32 High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN18 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBFN19 DH SOT891=B 2=C 3=EMaximum
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
