BFP180 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFP 180NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 180 RDs Q62702-F1377 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsPara

BFP 180WNPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 180W RDs Q62702-F1500 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsPa

BFP 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values

BFP 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Valu

BFP 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Valu

BFP 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values

BFP 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Un

BFP 181RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Val

BFP 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Va

BFP 183RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol V

BFP 182RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Values

BFP182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling

BFP183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configura

BFP181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 0.5 mA to 12 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Config

BFP183WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handlin

BFP182RLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configu