BFP180 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP180
Código: RDs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.03 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Corriente del colector DC máxima (Ic): 0.004 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4000 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: SOT23
Búsqueda de reemplazo de BFP180
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BFP180 datasheet
..1. Size:76K siemens
bfp180.pdf 
BFP 180 NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180 RDs Q62702-F1377 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Para
0.1. Size:59K siemens
bfp180w.pdf
BFP 180W NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180W RDs Q62702-F1500 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Pa
9.1. Size:58K siemens
bfp182w.pdf
BFP 182W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values
9.2. Size:59K siemens
bfp181w.pdf
BFP 181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Valu
9.3. Size:60K siemens
bfp183.pdf
BFP 183 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Valu
9.4. Size:60K siemens
bfp181.pdf
BFP 181 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values
9.5. Size:60K siemens
bfp182.pdf
BFP 182 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Un
9.6. Size:58K siemens
bfp181r.pdf
BFP 181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Val
9.7. Size:59K siemens
bfp183w.pdf
BFP 183W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Va
9.8. Size:58K siemens
bfp183r.pdf
BFP 183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol V
9.9. Size:58K siemens
bfp182r.pdf
BFP 182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Values
9.10. Size:545K infineon
bfp182w.pdf
BFP182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling
9.11. Size:541K infineon
bfp183.pdf
BFP183 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configura
9.12. Size:548K infineon
bfp181.pdf
BFP181 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Config
9.13. Size:543K infineon
bfp183w.pdf
BFP183W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handlin
9.14. Size:550K infineon
bfp182r.pdf
BFP182R Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configu
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