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BFP182 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFP182
   Código: RGs
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.035 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23

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BFP182 Datasheet (PDF)

 ..1. Size:60K  siemens
bfp182.pdf

BFP182
BFP182

BFP 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Un

 0.1. Size:58K  siemens
bfp182w.pdf

BFP182
BFP182

BFP 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values

 0.2. Size:58K  siemens
bfp182r.pdf

BFP182
BFP182

BFP 182RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Values

 0.3. Size:545K  infineon
bfp182w.pdf

BFP182
BFP182

BFP182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling

 0.4. Size:550K  infineon
bfp182r.pdf

BFP182
BFP182

BFP182RLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configu

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