BFP182T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP182T
Código: 82P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.035 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5500 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de transistor bipolar BFP182T
BFP182T Datasheet (PDF)
bfp182w.pdf
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BFP 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values
bfp182.pdf
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BFP 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Un
bfp182r.pdf
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BFP 182RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Values
bfp182w.pdf
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BFP182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling
bfp182r.pdf
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BFP182RLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configu
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