BFP182T Todos los transistores

BFP 182W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values

BFP 182 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Un

BFP 182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Values

BFP182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling

BFP182R Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configu