BFP183 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP183
Código: RHs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.065 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT23
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BFP183 Datasheet (PDF)
bfp183.pdf
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BFP 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Valu
bfp183.pdf
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BFP183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configura
bfp183w.pdf
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BFP 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Va
bfp183r.pdf
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BFP 183RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol V
bfp183w.pdf
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BFP183WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handlin
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