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BFP183 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFP183
   Código: RHs
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.28 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.065 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BFP183

 

BFP183 Datasheet (PDF)

 ..1. Size:60K  siemens
bfp183.pdf

BFP183
BFP183

BFP 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Valu

 ..2. Size:541K  infineon
bfp183.pdf

BFP183
BFP183

BFP183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configura

 0.1. Size:59K  siemens
bfp183w.pdf

BFP183
BFP183

BFP 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Va

 0.2. Size:58K  siemens
bfp183r.pdf

BFP183
BFP183

BFP 183RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol V

 0.3. Size:543K  infineon
bfp183w.pdf

BFP183
BFP183

BFP183WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handlin

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History: BUL47B | DTA123TET1G | MD985 | 2SB998 | RN2973CT | 2N5153L

 

 
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