BFQ193 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFQ 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 7.5 GHz F = 1.3 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 193 RCs Q62702-F1312 1 = B 2 = C 3 = E SOT-89Maximum RatingsParameter Symbol Values UnitC

BFQ19NPN 5 GHz wideband transistorRev. 03 28 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.

DISCRETE SEMICONDUCTORSDATA SHEETBFQ19NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFQ19DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FBthick and thin-film circuits. It is

BFQ 19SNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA CECC-type available: CECC 50 002/259ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 19S FGs Q62702-F1088 1 =

BFQ19SLow Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband12 amplifiers in antenna and32 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Ty