BFR106 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT23 envelope. It is lfpage 3 Code R7p primarily intended for low noise, 1 base general RF applicati

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION age 3 in a plastic SOT23 envelope. It is Code R7p primarily intended for

BFR 106 NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application antenna amplifiers Complementary type BFR 194 (PNP) ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23 Maximum Rat

BFR106 Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to

isc Silicon NPN RF Transistor BFR106 DESCRIPTION Low Noise Figure NF = 2.5 dB TYP. @V = 8 V, I = 20 mA, f = 900 MHz CE C High Gain S 2 = 10.5 dB TYP. @V = 8 V,I = 70 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.