BFR180 Todos los transistores

 ..1. Size:56K  siemens
 bfr180.pdf

BFR 180 NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 180 RDs Q62702-F1296 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter

 0.1. Size:56K  siemens
 bfr180w.pdf

BFR 180W NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 180W RDs Q62702-F1490 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parame

 9.1. Size:74K  1
 bfr182t bfr182tw.pdf

BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 652 13 570 13 581 94 9280 2 3 23 BFR182T Marking RG BFR182TW Marking WRG Plastic cas

 9.2. Size:55K  siemens
 bfr182w.pdf

BFR 182W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit

 9.3. Size:56K  siemens
 bfr183w.pdf

BFR 183W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Uni

 9.4. Size:71K  siemens
 bfr182.pdf

BFR 182 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Col

 9.5. Size:57K  siemens
 bfr181.pdf

BFR 181 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 181 RFs Q62702-F1314 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit

 9.6. Size:56K  siemens
 bfr183.pdf

BFR 183 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit

 9.7. Size:56K  siemens
 bfr181w.pdf

BFR 181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 181W RFs Q62702-F1491 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Un

 9.8. Size:666K  infineon
 bfr182w.pdf

BFR182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling pre

 9.9. Size:613K  infineon
 bfr182.pdf

BFR182 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Packag

 9.10. Size:613K  infineon
 bfr181.pdf

BFR181 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Pack

 9.11. Size:613K  infineon
 bfr183.pdf

BFR183 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Packag

 9.12. Size:666K  infineon
 bfr181w.pdf

BFR181W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensit

 9.13. Size:124K  kexin
 bfr181.pdf

SMD Type Transistors Transistors NPN Silicon RF Transistor BFR181(KFR181) Features SOT-23 Unit mm For low noise, high-gain broadband amplifiers at +0.1 2.9-0.1 +0.1 0.4 -0.1 collector currents from 0.5 mA to 12 mA 3 fT = 8 GHz F = 1.45dB at 900MHz 12 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parame

 9.14. Size:242K  inchange semiconductor
 bfr183w.pdf

isc Silicon NPN RF Transistor BFR183W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.). ABSOL

 9.15. Size:242K  inchange semiconductor
 bfr183.pdf

isc Silicon NPN RF Transistor BFR183 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.). ABSOLU

 9.16. Size:222K  inchange semiconductor
 bfr182tw.pdf

isc Silicon NPN RF Transistor BFR182TW DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15 V CBO