BFR180W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFR 180WNPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 180W RDs Q62702-F1490 1 = B 2 = E 3 = C SOT-323Maximum RatingsParame

BFR 180NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 180 RDs Q62702-F1296 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter

BFR182T/BFR182TWVishay TelefunkenSilicon NPN Planar RF TransistorElectrostatic sensitive device. Observe precautions for handling. ApplicationsFor low noise and high gain broadband amplifiers atcollector currents from 1 mA to 20 mA.FeaturesD Low noise figureD High power gain1 113 652 13 57013 58194 92802 323BFR182T Marking: RG BFR182TW Marking: WRGPlastic cas

BFR 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Unit

BFR 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Uni

BFR 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCol

BFR 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181 RFs Q62702-F1314 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit

BFR 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit

BFR 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181W RFs Q62702-F1491 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Un

BFR182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling pre

BFR182Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag

BFR181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pack

BFR183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag

BFR181WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensit

SMD Type TransistorsTransistorsNPN Silicon RF TransistorBFR181(KFR181) FeaturesSOT-23Unit: mm For low noise, high-gain broadband amplifiers at+0.12.9-0.1+0.10.4 -0.1collector currents from 0.5 mA to 12 mA3 fT = 8 GHz F = 1.45dB at 900MHz12+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25 Parame

isc Silicon NPN RF Transistor BFR183WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOL

isc Silicon NPN RF Transistor BFR183DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOLU

isc Silicon NPN RF Transistor BFR182TWDESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO