BFR182W Todos los transistores

 ..1. Size:55K  siemens
 bfr182w.pdf

BFR 182W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit

 ..2. Size:666K  infineon
 bfr182w.pdf

BFR182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling pre

 8.1. Size:74K  1
 bfr182t bfr182tw.pdf

BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 652 13 570 13 581 94 9280 2 3 23 BFR182T Marking RG BFR182TW Marking WRG Plastic cas

 8.2. Size:71K  siemens
 bfr182.pdf

BFR 182 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Col

 8.3. Size:613K  infineon
 bfr182.pdf

BFR182 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Packag

 8.4. Size:222K  inchange semiconductor
 bfr182tw.pdf

isc Silicon NPN RF Transistor BFR182TW DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15 V CBO