BFR183 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR183
Código: RHs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.065 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFR183
BFR183 Datasheet (PDF)
bfr183.pdf
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BFR 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit
bfr183.pdf
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BFR183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag
bfr183.pdf
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isc Silicon NPN RF Transistor BFR183DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOLU
bfr183w.pdf
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BFR 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Uni
bfr183w.pdf
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isc Silicon NPN RF Transistor BFR183WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOL
bfr182t bfr182tw.pdf
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BFR182T/BFR182TWVishay TelefunkenSilicon NPN Planar RF TransistorElectrostatic sensitive device. Observe precautions for handling. ApplicationsFor low noise and high gain broadband amplifiers atcollector currents from 1 mA to 20 mA.FeaturesD Low noise figureD High power gain1 113 652 13 57013 58194 92802 323BFR182T Marking: RG BFR182TW Marking: WRGPlastic cas
bfr182w.pdf
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BFR 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Unit
bfr180.pdf
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BFR 180NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 180 RDs Q62702-F1296 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter
bfr182.pdf
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BFR 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCol
bfr180w.pdf
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BFR 180WNPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 180W RDs Q62702-F1490 1 = B 2 = E 3 = C SOT-323Maximum RatingsParame
bfr181.pdf
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BFR 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181 RFs Q62702-F1314 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit
bfr181w.pdf
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BFR 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181W RFs Q62702-F1491 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Un
bfr182w.pdf
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BFR182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling pre
bfr182.pdf
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BFR182Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag
bfr181.pdf
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BFR181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pack
bfr181w.pdf
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BFR181WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensit
bfr181.pdf
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SMD Type TransistorsTransistorsNPN Silicon RF TransistorBFR181(KFR181) FeaturesSOT-23Unit: mm For low noise, high-gain broadband amplifiers at+0.12.9-0.1+0.10.4 -0.1collector currents from 0.5 mA to 12 mA3 fT = 8 GHz F = 1.45dB at 900MHz12+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25 Parame
bfr182tw.pdf
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isc Silicon NPN RF Transistor BFR182TWDESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BCY58-9
History: BCY58-9
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Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D