BFR35AR Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR35AR
Código: GZ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3000 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: SOT23
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BFR35AR datasheet
bfr35ap.pdf
BFR 35AP NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emit
bfr35ap.pdf
BFR35AP Low Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR35AP GEs SOT
bfr35ap.pdf
isc Silicon NPN RF Transistor BFR35AP DESCRIPTION Low Noise Figure NF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHz CE C High Gain S 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIMUM R
Otros transistores... BFR28, BFR280, BFR280W, BFR34, BFR34A, BFR35, BFR35A, BFR35AP, BC639, BFR36, BFR36A, BFR37, BFR38, BFR39, BFR39TO5, BFR40, BFR40TO5
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