BFS20R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BFS20WNPN medium frequency transistorProduct data sheet 1999 Apr 21NXP Semiconductors Product data sheetNPN medium frequency transistor BFS20WFEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 20 V).1 base Very low feedback capacitance (typ. 350 fF).2 emitter3 collectorAPP

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BFS20WNPN medium frequency transistor1999 Apr 21Product specificationPhilips Semiconductors Product specificationNPN medium frequency transistor BFS20WFEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 20 V).1 base Very low feedback capacitance (typ. 350 fF).2 emitter3 collec

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BFS20NPN medium frequency transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 08Philips Semiconductors Product specificationNPN medium frequency transistor BFS20FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 20 V)1 base Very low feedback capacitance (typ.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT SI I O A A S 0 H T A SISTO ISS A A Y 6 T I D T I SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II I V V I V V I T i V I V V I V V i 8 I V V T i T i i T I V V i I V V II i T 8 I I V V I i i I i D I

BFS20NPN SiliconElektronische BauelementePlastic-Encapsulate TransistorA suffix of "-C" specifies halogen & lead-freeFEATURES Collector3 3SOT-23High Fequency Application. Dim Min Max11 VHF Band Amplifier applicationA 2.800 3.0402 BaseB 1.200 1.400RoHS Compliant ProductC 0.890 1.1102Power dissipationAEmitterD 0.370 0.500LPCM : 0.25 WG 1.780 2

SEMICONDUCTOR BFS20/BF599TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15MAXIMUM RATING (Ta=25 )C 1.30 MAX23 D 0.45+0.15/-0.05CHARACTERISTIC SYMBOL RATING UNITE 2.40+0.30/-0.201G 1.90VCBOCollector-Base Voltage 40 VH 0.95J 0.13+0.10/-0.05VCEO

BFS20TRANSISTOR (NPN) SOT23 FEATURES Very Low Feedback Capacitance Low Current Low Voltage APPLICATIONS IF and VHF Applications in Thick and Thin-Film Circuits 1. BASE 2. EMITTER 3. COLLECTOR MARKING:G11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage

SMD Type TransistorsNPN TransistorsBFS20 (KFS20)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Low current (max. 25 mA) Low voltage (max. 20 V) Very low feedback capacitance (typ. 350 fF). 1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto