BFS481 Todos los transistores

 ..1. Size:53K  siemens
 bfs481.pdf

BFS 481 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA fT = 8 GHz F = 1.4 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 481 RFs Q62702-F1572 1/4 =

 ..2. Size:558K  infineon
 bfs481.pdf

BFS481 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 4 collector currents from 0.5 mA to 12 mA 5 3 6 2 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package For orientation in reel see package information below Easy to use Pb-free (RoHS compliant) and halogen free indu

 9.1. Size:53K  siemens
 bfs482.pdf

BFS 482 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one package ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 482 RGs Q62702-F1573 1/4 = B

 9.2. Size:52K  siemens
 bfs480.pdf

BFS 480 NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7GHz F = 1.5dB at 900MHz Two (galvanic) internal isolated Transistors in one package ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Conf

 9.3. Size:53K  siemens
 bfs483.pdf

BFS 483 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one package ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 483 RHs Q62702-F1574 1/4 = B 2/5

 9.4. Size:560K  infineon
 bfs483.pdf

BFS483 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA 5 3 6 2 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Two (galvanic) internal isolated Transistor in one package For orientation in reel see package information below Pb-free (RoHS compliant) and halogen-free package with visib