BFT92W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFT92W
Código: W1_W1s
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4000 MHz
Capacitancia de salida (Cc): 1.4 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
BFT92W Datasheet (PDF)
bft92w 1.pdf

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DISCRETE SEMICONDUCTORS DATA SHEETBFT92WPNP 4 GHz wideband transistorProduct specification May 1994NXP Semiconductors Product specificationPNP 4 GHz wideband transistor BFT92WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3SOT323 (S-mini) package. The handbook, 2 columns Gold metallization ensures BFT92W uses the same crystal as the
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BFT 92WPNP Silicon RF Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92W (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 92W W1s Q62702-F1681 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitte
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DISCRETE SEMICONDUCTORSDATA SHEETBFT92PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: W1pIt is primarily intended for use in RF1 basefpage 3wideba
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BFT18A
History: BFT18A



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