BFY50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BFY50
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 35 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO5

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BFY50 Datasheet (PDF)

..1. Size:55K philips
bfy50 bfy51 bfy52 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFY50; BFY51; BFY52NPN medium power transistors1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BFY50; BFY51; BFY52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 35 V)

..2. Size:46K st
bfy50.pdf

BFY50/51MEDIUM POWER AMPLIFIERDESCRIPTIONThe BFY50 and BFY52 are silicon planarepitaxial NPN transistors in Jedec TO-39 metalcase. They are intended for general purposelinear and switching applications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBFY50 BFY51V Collector-Base Voltage (I = 0) 80 60 VCBO EV Collector-Emitter Voltage (

..3. Size:132K cdil
bfy50 bfy51 bfy52.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITSVCEOCollector Emitter Voltage 35 30 20 VVCBOCollector Base Voltage 80 60 40 VVEBOE

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N4016

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050