BSC1016B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSC1016B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 7.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.02 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: SPECIAL

Búsqueda de reemplazo de transistor bipolar BSC1016B

BSC1016B Datasheet (PDF)

9.1. Size:394K infineon
bsc100n06ls3g.pdf

TypeBSC100N06LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 10 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli

9.2. Size:654K infineon
bsc100n10nsf8 bsc100n10nsfg.pdf

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9.3. Size:524K infineon
bsc100n03msg.pdf

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

9.4. Size:658K infineon
bsc105n10lsf9 bsc105n10lsfg.pdf

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9.5. Size:485K infineon
bsc100n03ms.pdf

9.6. Size:689K infineon
bsc100n03ls.pdf

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9.7. Size:585K infineon
bsc100n06ls3.pdf