BSP16T3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP16T3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BSP16T3
BSP16T3 Datasheet (PDF)
bsp16t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP16T1/DSOT-223 Package BSP16T1Motorola Preferred DeviceHigh Voltage TransistorPNP SiliconCOLLECTOR 2,4SOT223 PACKAGEPNP SILICONHIGH VOLTAGEBASETRANSISTOR1SURFACE MOUNTEMITTER 34MAXIMUM RATINGSRating Symbol Value Unit 123CollectorEmitter Voltage VCEO 300 VdcCollectorBase Voltage
bsp16t1g.pdf
BSP16T1GHigh Voltage TransistorsPNP SiliconFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantPNP SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGSSURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO --300 VdcCollector-Base Voltage VCBO --350 VdcCOLLECTOR 2,4Emitter-Base Voltage VEBO --6.0 VdcCollector C
bsp16t1-d.pdf
BSP16T1GHigh Voltage TransistorsPNP SiliconFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantPNP SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGSSURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO --300 VdcCollector-Base Voltage VCBO --350 VdcCOLLECTOR 2,4Emitter-Base Voltage VEBO --6.0 VdcCollector C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
