BSP31 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP31
Código: BR2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar BSP31
BSP31 Datasheet (PDF)
bsp31 bsp32 bsp33 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP
bsp30 bsp31 bsp32 bsp33.pdf
BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH
bsp31 bsp33.pdf
BSP31BSP33SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAOrdering Code MarkingBSP31 P31BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUMVOLTAGE TRANSISTORS2 SOT-223 PLASTIC PACKAGE FORSURFACE MOUNTING CIRCUITS3 TAPE AND REEL PACKING2 THE NPN COMPLEMENTARY TYPES ARE1BSP41 AND BSP43 RESPECTIVELYSOT-223APPLICATIONS MEDIUM VOLTAGE LOAD SWITCHTRANSISTORS OUT
bsp31 bsp32 bsp33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp31 bsp33.pdf
SOT223 PNP SILICON PLANARBSP31MEDIUM POWER TRANSISTORSBSP33ISSUE 3 FEBRUARY 1996 T T C T I D T I D i i IIECBABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T T T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I V I V I II i V V I V I 8
bsp318.pdf
BSP 318SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 318 60 V 2.6 A 0.15 SOT-223 BSP 318Type Ordering Code Tape and Reel InformationBSP 318 Q67000-S127 E6327Maximum RatingsParameter Symbol Values UnitContinuous dra
bsp316p.pdf
BSP316PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -100 V P-ChannelRDS(on) 1.8 Enhancement modeID -0.68 A Logic LevelPG-SOT223-4-1 dv/dt ratedDrainpin 2/4Gate Qualified according to AEC Q101 pin1 HalogenfreeaccordingtoIE C61249221Sourcepin 3Type Package Tape and Reel Information Marking Packa
bsp317.pdf
BSP 317SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 317 -200 V -0.37 A 6 SOT-223Type Ordering Code Tape and Reel InformationBSP 317 Q67000-S94 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -200 VVDrain-
bsp315p.pdf
Preliminary dataBSP 315 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.8 Avalanche ratedContinuous drain current ID -1.17 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 315 P SOT-223 Q67042-S4004 G D SMaximum
bsp318s.pdf
Rev 2.3BSP318SSIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.09 Avalanche rated Continuous drain current ID 2.6 A Logic Level4 dv/dt ratedPb-free lead plating; RoHS compliant 3Pin 1 Pin 2, 4 PIN 3 Qualified according to AEC Q101
bsp316.pdf
BSP 316SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 316 -100 V -0.65 A 2.2 SOT-223 BSP 316Type Ordering Code Tape and Reel InformationBSP 316 Q67000-S92 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -100 V
bsp317p.pdf
BSP317PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -250 V P-ChannelRDS(on) 4 Enhancement modeID -0.43 A Logic LevelPG-SOT223 dv/dt ratedDrain4pin 2/4Gate Qualified according to AEC Q101 pin13Source2pin 31VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP317P Non dryBS
bsp319.pdf
BSP 319SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 319 50 V 3.8 A 0.07 SOT-223 BSP 319Type Ordering Code Tape and Reel InformationBSP 319 Q67000-S273 E6327Maximum RatingsParameter Symbol Values UnitContinuous dra
bsp315p .pdf
BSP315PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level4 dv/dt ratedPin 1 Pin2/4 PIN 33 Qualified according to AEC Q101 2G D S1VPS05163Type Package Tape and Reel In
bsp315p.pdf
BSP315Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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