BSP31T3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP31T3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BSP31T3
BSP31T3 Datasheet (PDF)
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP
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BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH
bsp31 bsp33.pdf
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bsp31 bsp32 bsp33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp318.pdf
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SOT223 PNP SILICON PLANARBSP31MEDIUM POWER TRANSISTORSBSP33ISSUE 3 FEBRUARY 1996 T T C T I D T I D i i IIECBABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T T T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I V I V I II i V V I V I 8
bsp316p.pdf
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bsp317.pdf
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bsp315p.pdf
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bsp318s.pdf
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bsp316.pdf
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bsp317p.pdf
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bsp319.pdf
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bsp315p .pdf
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bsp315p.pdf
BSP315Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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