BSP52T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP52T1
Código: AS3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: SOT23
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BSP52T1 Datasheet (PDF)
bsp52t1r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP52T1/DNPN Small-SignalBSP52T1Darlington TransistorMotorola Preferred DeviceThis NPN small signal darlington transistor is designed for use in switchingapplications, such as print hammer, relay, solenoid and lamp drivers. The device isMEDIUM POWERhoused in the SOT-223 package, which is designed for medium power su
sbsp52t1g.pdf

BSP52T1G, BSP52T3GNPN Small-SignalDarlington TransistorThis NPN small signal Darlington transistor is designed for use inswitching applications, such as print hammer, relay, solenoid and lampdrivers. The device is housed in the SOT-223 package, which ishttp://onsemi.comdesigned for medium power surface mount applications.FeaturesMEDIUM POWER The SOT-223 Package can be sol
bsp52t1g.pdf

BSP52T1G, BSP52T3GNPN Small-SignalDarlington TransistorThis NPN small signal Darlington transistor is designed for use inswitching applications, such as print hammer, relay, solenoid and lampdrivers. The device is housed in the SOT-223 package, which ishttp://onsemi.comdesigned for medium power surface mount applications.FeaturesMEDIUM POWER The SOT-223 Package can be sol
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