BSS31
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS31
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de transistor bipolar BSS31
BSS31
Datasheet (PDF)
0.2. Size:231K infineon
bss316n.pdf
BSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and R
0.4. Size:126K tysemi
bss315p.pdf
Product specificationBSS315POptiMOS-P 2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =10 V 150mDS(on),max GSV =4.5 V 270 Enhancement modeGSI -1.5 ADLogic level (4.5V rated) Avalanche ratedPG-SOT-23 Qualified according to AEC Q1013100% lead-free; RoHS compliantHalogen-free according to AEC61249-2-211
0.5. Size:131K tysemi
bss316n.pdf
Product specificationBSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112
0.6. Size:529K tysemi
bss314pe.pdf
Product specificationBSS314PEOptiMOS-P 3 Small-Signal-TransistorProduct Summary FeaturesVDS 30 V P-channelRDS(on),max VGS=-10 V 140 mW Enhancement modeVGS=-4.5 V 230 Logic level (4.5V rated)ID -1.5 A ESD protectedPG-SOT-23 Qualified according AEC Q1013 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 1
0.7. Size:1723K cn vbsemi
bss316n.pdf
BSS316Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
Otros transistores... 2N3200
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, 2N3209DCSM
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, 2N3211
.