BSS31 Todos los transistores

BSS315P #

BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100%lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and R

BSS314PE 9

Product specification BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =10 V 150 m DS(on),max GS V =4.5 V 270 Enhancement mode GS I -1.5 A D Logic level (4.5V rated) Avalanche rated PG-SOT-23 Qualified according to AEC Q101 3 100% lead-free; RoHS compliant Halogen-free according to AEC61249-2-21 1

Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100%lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2

Product specification BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features VDS 30 V P-channel RDS(on),max VGS=-10 V 140 mW Enhancement mode VGS=-4.5 V 230 Logic level (4.5V rated) ID -1.5 A ESD protected PG-SOT-23 Qualified according AEC Q101 3 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 1 1

BSS316N www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G