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BSS35 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS35
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar BSS35

 

BSS35 Datasheet (PDF)

 0.1. Size:64K  philips
pbss3515f 1.pdf

BSS35 BSS35

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS3515FPNP transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationPNP transistor PBSS3515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (Automotive,Telecom and Audio Video) such as

 0.2. Size:142K  philips
pbss3515m.pdf

BSS35 BSS35

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3515M15 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet15 V, 0.5 A PBSS3515MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 0.3. Size:113K  nxp
pbss3515e.pdf

BSS35 BSS35

PBSS3515E15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 02 27 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 0.4. Size:103K  nxp
pbss3540e.pdf

BSS35 BSS35

PBSS3540E40 V, 500 mA PNP low VCEsat (BISS) transistorRev. 01 3 May 2005 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMDplastic package.NPN complement: PBSS2540E.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High

 0.5. Size:87K  nxp
pbss3540m.pdf

BSS35 BSS35

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3540M40 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Aug 12NXP Semiconductors Product data sheet40 V, 0.5 A PBSS3540MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 0.6. Size:603K  nxp
pbss3540mb.pdf

BSS35 BSS35

PBSS3540MB40 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 7 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

 0.7. Size:547K  nxp
pbss3515mb.pdf

BSS35 BSS35

PBSS3515MB15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 6 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

 0.8. Size:74K  nxp
pbss3515vs.pdf

BSS35 BSS35

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS3515VS15 V low VCEsat PNP doubletransistorProduct specification 2001 Nov 07Supersedes data of 2001 Sep 27Philips Semiconductors Product specification15 V low VCEsat PNP double transistorPBSS3515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p

 0.9. Size:347K  nxp
pbss3515m.pdf

BSS35 BSS35

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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