BSS35 Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (Automotive, Telecom and Audio Video) such as

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 02 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 01 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement PBSS2540E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Aug 12 NXP Semiconductors Product data sheet 40 V, 0.5 A PBSS3540M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2540MB. 1.2 Features and benefits Leadless ultra small SMD plastic High ef

PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High ef

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product specification 2001 Nov 07 Supersedes data of 2001 Sep 27 Philips Semiconductors Product specification 15 V low VCEsat PNP double transistor PBSS3515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain