BSS42 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS42
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO39
Búsqueda de reemplazo de BSS42
- Selecciónⓘ de transistores por parámetros
BSS42 datasheet
0.1. Size:146K philips
pbss4250x.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Nov 08 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS4250X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
0.2. Size:435K philips
pbss4240dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT
0.3. Size:246K philips
pbss4240t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO
0.4. Size:251K philips
pbss4230t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC
0.5. Size:195K nxp
pbss4250x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.6. Size:247K nxp
pbss4230pan.pdf
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect
0.7. Size:244K nxp
pbss4260qa.pdf
PBSS4260QA 60 V, 2 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5260QA. 2. Features and benefits Very low collector-emitter
0.8. Size:55K nxp
pbss4240y.pdf
DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr
0.9. Size:699K nxp
pbss4240dpn.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.10. Size:183K nxp
pbss4240x.pdf
PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H
0.11. Size:338K nxp
pbss4230panp.pdf
PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4230PAN. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect
0.12. Size:86K nxp
pbss4240v.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VCEO collector-emitter voltage
0.13. Size:244K nxp
pbss4230qa.pdf
PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5230QA. 2. Features and benefits Very low collector-emitter
0.14. Size:249K nxp
pbss4260pan.pdf
PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect
0.15. Size:734K nxp
pbss4260pans.pdf
PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5260PAPS 2. Features and benefits
0.16. Size:165K nxp
pbss4220v.pdf
PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement PBSS5220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit
0.17. Size:208K nxp
pbss4240z.pdf
PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi
0.18. Size:461K nxp
pbss4240t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.19. Size:340K nxp
pbss4260panp.pdf
PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4260PAN. PNP/PNP complement PBSS5260PAP. 2. Features and benefits Very low collect
0.20. Size:724K nxp
pbss4220pans.pdf
PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor 14 December 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement PBSS5220PAPS 2. Features and benefits
0.21. Size:467K nxp
pbss4230t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.22. Size:827K lrc
lbss4250y3t1g.pdf
LBSS4250Y3T1G S-LBSS4250Y3T1G 1 NPN 2.0A 50V Middle Power Transistor 2 3 1. FEATURES Suitable for Middle Power Driver SOT89 Complementary NPN Types Low VCE(sat) We declare that the material of product compliance with 2 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique site and control change requireme
0.23. Size:929K lrc
lbss4240lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors 40V,2A Low VCE(sat) NPN Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors. 3 We declare that the material of product complian
0.24. Size:309K lrc
lbss4240lt1g lbss4240lt3g.pdf
LBSS4240LT1G S-LBSS4240LT1G General Purpose Transistors NPN Silicon 1. FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SOT23
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