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BSS52 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS52

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 2000

Empaquetado / Estuche: TO5-1

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BSS52 Datasheet (PDF)

1.1. bss50 bss51 bss52 3.pdf Size:52K _philips

BSS52
BSS52

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V) 1 emi

1.2. pbss5240t.pdf Size:287K _philips

BSS52
BSS52

 DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2001 Oct 31 NXP Semiconductors Product data sheet 40 V, 2 A PBSS5240T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT • High current capability VCEO c

 1.3. pbss5250x.pdf Size:147K _philips

BSS52
BSS52

 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT • Low collector-emitter sat

1.4. pbss5220t.pdf Size:257K _philips

BSS52
BSS52

 DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 18 NXP Semiconductors Product data sheet 20 V, 2 A PBSS5220T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability: IC and I

 1.5. pbss5240y.pdf Size:62K _nxp

BSS52
BSS52

 DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet 2002 Feb 28 Supersedes data of 2001 Oct 24 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT • High current capability VCEO collector-emit

1.6. pbss5230qa.pdf Size:237K _nxp

BSS52
BSS52

PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • Very low collector-emitter

1.7. pbss5220v.pdf Size:162K _nxp

BSS52
BSS52

PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit

1.8. pbss5230t.pdf Size:50K _nxp

BSS52
BSS52

DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PBSS5230T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability: IC

1.9. pbss5260pap.pdf Size:246K _nxp

BSS52
BSS52

PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN. 2. Features and benefits • Very low collect

1.10. pbss5260qa.pdf Size:244K _nxp

BSS52
BSS52

PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. 2. Features and benefits • Very low collector-emitte

1.11. pbss5230pap.pdf Size:266K _nxp

BSS52
BSS52

PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. 2. Features and benefits • Very low collecto

1.12. pbss5250x.pdf Size:147K _nxp

BSS52
BSS52

 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT • Low collector-emitter sat

1.13. pbss5250t.pdf Size:43K _nxp

BSS52
BSS52

DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PBSS5250T PNP low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage -50 V •

1.14. pbss5240z.pdf Size:224K _nxp

BSS52
BSS52

PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

1.15. pbss5240x.pdf Size:197K _nxp

BSS52
BSS52

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • H

1.16. bss50a bss51a bss52a.pdf Size:62K _comset

BSS52
BSS52

NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A – 61A – 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val

1.17. lbss5240lt1g.pdf Size:609K _lrc

BSS52
BSS52

LESHAN RADIO COMPANY, LTD. General Purpose Transistors -40V,-2A Low VCE(sat) PNP Silicon FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat LBSS5240LT1G generation S-LBSS5240LT1G • Replacement for SOT89/SOT223 standard packaged transistors. 3 • We declare that the material of product complian

1.18. pbss5240v.pdf Size:1566K _kexin

BSS52
BSS52

SMD Type Transistors PNP Transistors PBSS5240V (KBSS5240V) SOT523-6(SOT666) ■ Features 4 ● Low collector-emitter saturation voltage VCEsat ● High collector current capability IC and ICM 5 3 ● High collector current gain (hFE) at high IC 6 2 ● High efficiency leading to reduced heat generation 1.collector 2.collector ● Reduced printed-circuit board area requireme

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