BSS54 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS54
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar BSS54
BSS54 Datasheet (PDF)
pbss5440d.pdf
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pbss5420d.pdf
PBSS5420D20 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 29 September 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect
pbss5480x.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS5480X80 V, 4 APNP low VCEsat (BISS) transistorProduct specification 2004 Nov 08Supersedes data of 2004 Jun 8Philips Semiconductors Product specification80 V, 4 APBSS5480XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BSV87 | SRA2219M
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050