BSS54 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS54
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO5
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BSS54 Datasheet (PDF)
pbss5440d.pdf

PBSS5440D40 V PNP low VCEsat (BISS) transistorRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.NPN complement: PBSS4440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector curr
pbss5420d.pdf

PBSS5420D20 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 29 September 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect
pbss5480x.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS5480X80 V, 4 APNP low VCEsat (BISS) transistorProduct specification 2004 Nov 08Supersedes data of 2004 Jun 8Philips Semiconductors Product specification80 V, 4 APBSS5480XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNI
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: FMMT497 | KSC900G | Q-00369C | KT8143M | BF883 | BD617 | 3DK29
History: FMMT497 | KSC900G | Q-00369C | KT8143M | BF883 | BD617 | 3DK29



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