BSS63 Todos los transistores

 

BSS63 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS63

Código: BM_BMp_BMs_BMt_BMW_T1_T3_T6

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 110 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 85 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO236

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BSS63 datasheet

 ..1. Size:100K  philips
bss63.pdf pdf_icon

BSS63

DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP high-voltage transistor BSS63 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 100 V). 1 base 2 emitter APPLICATIONS 3 collector High-voltage general purpose S

 ..2. Size:47K  philips
bss63 3.pdf pdf_icon

BSS63

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS63 PNP high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 03 Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 100 V). 1 base 2 emitter APPLICATIONS 3 collector H

 ..3. Size:36K  st
bss63.pdf pdf_icon

BSS63

BSS63 SMALL SIGNAL PNP TRANSISTOR Type Marking BSS63 T3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 2 CIRCUITS GENERAL PURPOSE LOW FREQUENCY 3 APPLICATONS 1 NPN COMPLEMENT IS BSS64 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (V = 0) -110 V CBO BE

 ..4. Size:61K  fairchild semi
bss63.pdf pdf_icon

BSS63

BSS63 C E SOT-23 B Mark T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 110 V 3 VEBO Emitter-Base Voltage 6.0 V IC

Otros transistores... BSS55 , BSS55A , BSS55B , BSS56 , BSS59 , BSS60 , BSS61 , BSS62 , 431 , BSS63L , BSS64 , BSS64R , BSS65 , BSS65R , BSS66 , BSS66R , BSS67 .

 

 

 


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