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BSS63 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS63
   Código: BM_BMp_BMs_BMt_BMW_T1_T3_T6
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 110 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 85 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar BSS63

 

BSS63 Datasheet (PDF)

 ..1. Size:100K  philips
bss63.pdf

BSS63
BSS63

DISCRETE SEMICONDUCTORS DATA SHEETBSS63PNP high-voltage transistorProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP high-voltage transistor BSS63FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 100 V).1 base2 emitterAPPLICATIONS3 collector High-voltage general purpose S

 ..2. Size:47K  philips
bss63 3.pdf

BSS63
BSS63

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D088BSS63PNP high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 03Philips Semiconductors Product specificationPNP high-voltage transistor BSS63FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 100 V).1 base2 emitterAPPLICATIONS3 collector H

 ..3. Size:36K  st
bss63.pdf

BSS63
BSS63

BSS63SMALL SIGNAL PNP TRANSISTORType MarkingBSS63 T3 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS GENERAL PURPOSE LOW FREQUENCY3APPLICATONS 1 NPN COMPLEMENT IS BSS64SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (V = 0) -110 VCBO BE

 ..4. Size:61K  fairchild semi
bss63.pdf

BSS63
BSS63

BSS63CESOT-23BMark: T3PNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchapplications requiring high voltages. Sourced from Process 74.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 110 V3VEBO Emitter-Base Voltage 6.0 VIC

 ..5. Size:281K  nxp
bss63.pdf

BSS63
BSS63

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..6. Size:139K  siemens
bcx42 bss63.pdf

BSS63
BSS63

PNP Silicon AF and Switching Transistors BCX 42BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 42 DKs Q62702-C1485 B E C SOT-23BSS 63 BMs Q62702-S534Maximum RatingsParameter Symbol Values UnitBSS 63 BCX

 ..7. Size:59K  kec
bss63.pdf

BSS63

SEMICONDUCTOR BSS63TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15MAXIMUM RATING (Ta=25 )C 1.30 MAX23 D 0.45+0.15/-0.05CHARACTERISTIC SYMBOL RATING UNITE 2.40+0.30/-0.201G 1.90VCBO -110 VCollector-Base VoltageH 0.95J 0.13+0.10/-0.05VCEO -100 VColl

 0.1. Size:81K  motorola
bss63lt1.pdf

BSS63
BSS63

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS63LT1/DHigh Voltage TransistorBSS63LT1COLLECTORPNP Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 100 VdcCASE 31808, STYLE 6CollectorEmitter Voltage VCER VdcSOT23 (TO236AB)RBE = 10 k 110Collector Current Continuous I

 0.2. Size:91K  onsemi
bss63lt1g.pdf

BSS63
BSS63

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

 0.3. Size:81K  onsemi
bss63lt1g nsvbss63lt1g.pdf

BSS63
BSS63

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitColl

 0.4. Size:91K  onsemi
nsvbss63lt1g.pdf

BSS63
BSS63

BSS63LT1G,NSVBSS63LT1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitC

 0.5. Size:111K  onsemi
bss63lt1-d.pdf

BSS63
BSS63

BSS63LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTORMAXIMUM RATINGS 3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO -100 VdcBASECollector-Emitter Voltage VCER VdcRBE = 10 kW -1102Collector Current - Continuous IC -100 mAdc EMITTERTHERMAL CHARACTERISTICS

 0.6. Size:106K  tysemi
bss63r.pdf

BSS63

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeProduct specificationBSS63RSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesSOT23 PNP silicon planar12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -110 VCollector-emitter voltage

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