BSS63L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS63L
Código: BM
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 110 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO236
Búsqueda de reemplazo de BSS63L
- Selecciónⓘ de transistores por parámetros
BSS63L datasheet
bss63lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS63LT1/D High Voltage Transistor BSS63LT1 COLLECTOR PNP Silicon 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 100 Vdc CASE 318 08, STYLE 6 Collector Emitter Voltage VCER Vdc SOT 23 (TO 236AB) RBE = 10 k 110 Collector Current Continuous I
bss63lt1g.pdf
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C
bss63lt1g nsvbss63lt1g.pdf
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Coll
nsvbss63lt1g.pdf
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit C
Otros transistores... BSS55A , BSS55B , BSS56 , BSS59 , BSS60 , BSS61 , BSS62 , BSS63 , S9018 , BSS64 , BSS64R , BSS65 , BSS65R , BSS66 , BSS66R , BSS67 , BSS67R .
History: BSV27M
History: BSV27M
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815 | bu406