BSS64 Todos los transistores

 ..1. Size:47K  philips
 bss64 4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS64 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector Hig

 ..2. Size:62K  fairchild semi
 bss64.pdf

BSS64 C E SOT-23 B Mark U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Col

 ..3. Size:288K  nxp
 bss64.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..4. Size:140K  siemens
 bcx41 bss64.pdf

BCX 41 BSS 64 NPN Silicon AF and Switching Transistor BCX 41 BSS 64 High breakdown voltage Low collector-emitter saturation voltage Complementary types BCX 42, BSS 63 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCX 41 EKs Q62702-C1659 B E C SOT-23 BSS 64 AMs Q62702-S535 Maximum Ratings Parameter Symbol Values Unit BSS 64 BCX 41 Collector-

 ..5. Size:60K  kec
 bss64.pdf

SEMICONDUCTOR BSS64 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 MAXIMUM RATING (Ta=25 ) C 1.30 MAX 2 3 D 0.45+0.15/-0.05 CHARACTERISTIC SYMBOL RATING UNIT E 2.40+0.30/-0.20 1 G 1.90 VCBO Collector-Base Voltage 120 V H 0.95 J 0.13+0.10/-0.05 VCEO Collector-Em

 0.1. Size:77K  motorola
 bss64lt1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS64LT1/D Driver Transistor BSS64LT1 COLLECTOR NPN Silicon 3 1 BASE 2 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 80 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 120 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Contin

 0.2. Size:69K  onsemi
 bss64lt1g.pdf

BSS64LT1G Driver Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc 2 EMITTER Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL CHARAC