BSS81B Todos los transistores

 

BSS81B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS81B

Código: CD_CDs

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 35 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO236

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BSS81B datasheet

 9.1. Size:150K  nxp
pbss8110d.pdf pdf_icon

BSS81B

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3

 9.2. Size:135K  nxp
pbss8110x.pdf pdf_icon

BSS81B

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 9.3. Size:123K  nxp
pbss8110t.pdf pdf_icon

BSS81B

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag

 9.4. Size:163K  nxp
pbss8110y.pdf pdf_icon

BSS81B

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati

Otros transistores... BSS78 , BSS79 , BSS79B , BSS79C , BSS80 , BSS80B , BSS80C , BSS81 , TIP42C , BSS81C , BSS82 , BSS82B , BSS82BL , BSS82C , BSS82CL , BSS99 , BST15 .

 

 

 

 

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