BSX20CSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BSX20NPN switching transistor1997 May 14Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BSX20FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS

BSX20HIGH SPEED SATURATED SWITCHESDESCRIPTIONThe BSX20 is a silicon planar epitaxial NPNtransistors in Jedec TO-18 metal case. They areprimarily intended for veery high speed saturatedswitching applications.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (I = 0) 40 VCBO EVCES Collector-Emitter Voltage (VBE = 0)

BSX20DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 15V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.05

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20TO-18APPLICATIONSHigh Speed Saturated Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 40 VCollector -Emitter Voltage VCES 40 VCollector -Emitter Voltage VCEO 15 VEmitter -Base Voltage