BU1706A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU1706A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 1750 V

Tensión colector-emisor (Vce): 850 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 12

Encapsulados: TO220

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BU1706A datasheet

 ..1. Size:59K  philips
 bu1706a.pdf pdf_icon

BU1706A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltag

 ..2. Size:211K  inchange semiconductor
 bu1706a.pdf pdf_icon

BU1706A

isc Silicon NPN Power Transistor BU1706A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage V 1500 V CESM V = 0 B

 0.1. Size:60K  philips
 bu1706ax.pdf pdf_icon

BU1706A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi

 0.2. Size:63K  philips
 bu1706ab.pdf pdf_icon

BU1706A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak

MOSTRAR MÁS

Otros transistores... BU140, BU141, BU142, BU143, BU144, BU1508AX, BU1508DX, BU157, 2N3904, BU1706AX, BU1708AX, BU180, BU180A, BU181, BU181A, BU184, BU189