BU2508AX Todos los transistores

 ..1. Size:217K  inchange semiconductor
 bu2508ax.pdf

isc Silicon NPN Power Transistor BU2508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.1. Size:61K  philips
 bu2508aw 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations result

 7.2. Size:61K  philips
 bu2508aw.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations result

 7.3. Size:82K  philips
 bu2508af.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

 7.4. Size:58K  philips
 bu2508a 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulti

 7.5. Size:175K  cn sptech
 bu2508a.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU2508A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Co

 7.6. Size:215K  inchange semiconductor
 bu2508aw.pdf

isc Silicon NPN Power Transistor BU2508AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.7. Size:216K  inchange semiconductor
 bu2508a.pdf

isc Silicon NPN Power Transistor BU2508A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.8. Size:212K  inchange semiconductor
 bu2508af.pdf

isc Silicon NPN Power Transistor BU2508AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V