BU2520A Todos los transistores

 ..1. Size:60K  philips
 bu2520a 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emit

 ..2. Size:215K  inchange semiconductor
 bu2520a.pdf

isc Silicon NPN Power Transistor BU2520A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 0.1. Size:96K  philips
 bu2520af.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col

 0.2. Size:62K  philips
 bu2520aw 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi

 0.3. Size:62K  philips
 bu2520aw.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi

 0.4. Size:216K  inchange semiconductor
 bu2520af.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2520AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(T =25

 0.5. Size:215K  inchange semiconductor
 bu2520aw.pdf

isc Silicon NPN Power Transistor BU2520AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 0.6. Size:217K  inchange semiconductor
 bu2520ax.pdf

isc Silicon NPN Power Transistor BU2520AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V