BU2522AX Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2522AX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 115 pF
Ganancia de corriente contínua (hFE): 5
Encapsulados: ISOWATT218
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BU2522AX datasheet
bu2522ax.pdf
isc Silicon NPN Power Transistor BU2522AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of pc monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
bu2522aw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI
bu2522a 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAM
bu2522af.pdf
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Otros transistores... BU2520A, BU2520AF, BU2520AX, BU2520D, BU2520DF, BU2520DX, BU2522A, BU2522AF, C3198, BU2525A, BU2525AF, BU2525AX, BU2527A, BU2527AF, BU2527AX, BU284, BU287
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