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BU326 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU326
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 375 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BU326

 

BU326 Datasheet (PDF)

 ..1. Size:131K  inchange semiconductor
bu326 bu326a.pdf

BU326
BU326

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receivers chopper supplies. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 ..2. Size:206K  inchange semiconductor
bu326.pdf

BU326
BU326

isc Silicon NPN Power Transistor BU326DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 375V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMUM

 0.1. Size:62K  st
bu326a.pdf

BU326
BU326

BU326AHIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEEDAPPLICATIONS: POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1 2DESCRIPTION TO-3The BU326A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-3 metal case particularlyintended for switch-mode CTV supply system.INTERNAL SCHEMATIC D

 0.2. Size:208K  inchange semiconductor
bu326s.pdf

BU326
BU326

isc Silicon NPN Power Transistor BU326SDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMU

 0.3. Size:205K  inchange semiconductor
bu326a.pdf

BU326
BU326

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU326ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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