BU326R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU326R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 62 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

 Búsqueda de reemplazo de BU326R

- Selecciónⓘ de transistores por parámetros

 

BU326R datasheet

 9.1. Size:62K  st
bu326a.pdf pdf_icon

BU326R

BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 DESCRIPTION TO-3 The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. INTERNAL SCHEMATIC D

 9.2. Size:208K  inchange semiconductor
bu326s.pdf pdf_icon

BU326R

isc Silicon NPN Power Transistor BU326S DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMU

 9.3. Size:131K  inchange semiconductor
bu326 bu326a.pdf pdf_icon

BU326R

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receiver s chopper supplies. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 9.4. Size:205K  inchange semiconductor
bu326a.pdf pdf_icon

BU326R

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in operating in color TV receivers chopper su

Otros transistores... BU326, BU326A, BU326A-4, BU326A-5, BU326A-6, BU326A-7, BU326A-8, BU326P, D882P, BU326S, BU361, BU406, BU406D, BU406F, BU406H, BU407, BU407D