BU406H Todos los transistores

 

BU406H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU406H
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TOP66
 

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BU406H Datasheet (PDF)

 ..1. Size:45K  fairchild semi
bu406 bu406h bu408 bu406 bu408.pdf pdf_icon

BU406H

BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co

 ..2. Size:61K  samsung
bu406 bu406 bu406h bu408 sam.pdf pdf_icon

BU406H

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current

 ..3. Size:211K  inchange semiconductor
bu406h.pdf pdf_icon

BU406H

isc Silicon NPN Power Transistor BU406HDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 0.1. Size:147K  shantou-huashan
hbu406h.pdf pdf_icon

BU406H

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406H APPLICATIONS High Voltage Swltching . ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

Otros transistores... BU326A-8 , BU326P , BU326R , BU326S , BU361 , BU406 , BU406D , BU406F , BD777 , BU407 , BU407D , BU407F , BU407FI , BU407H , BU408 , BU408D , BU409 .

History: GES2926 | MRF5176 | BULD742C | 2SD2584 | GC519 | 2SB354 | MP1612B

 

 
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