BU407H Todos los transistores

 ..1. Size:46K  fairchild semi
 bu407 bu407h.pdf

BU407/407H High Voltage Switching Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collec

 ..2. Size:212K  inchange semiconductor
 bu407h.pdf

isc Silicon NPN Power Transistor BU407H DESCRIPTION High Voltage V = 330V(Min) CEV Fast Switching Speed- t = 750ns(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMU

 9.1. Size:100K  motorola
 bu406 bu407.pdf

Order this document MOTOROLA by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV s and CRT s. 7 AMPERES NPN SILICON High Voltage VCEV = 330 or 400 V POWER TRANSISTORS Fast Switching Speed tf = 750 ns (max)

 9.2. Size:36K  st
 bu407f.pdf

BU407FI SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU407FI is a silicon epitaxial planar NPN 3 transistors in ISOWATT220 plastic package. 2 1 It is a fast switching, high voltage device for use in horizontal deflection output stages of medium ISOWATT220 and small screens MTV receivers w

 9.3. Size:66K  st
 bu406d bu407d.pdf

BU406D BU407D SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 2 1 TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for us

 9.4. Size:61K  samsung
 bu407.pdf

BU407/407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 330 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current IB 4

 9.5. Size:81K  onsemi
 bu406 bu407.pdf

BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV s and CRT s. Features High Voltage www.onsemi.com Fast Switching Speed Low Saturation Voltage NPN SILICON These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS 7 AMPERES - 60 WATTS MAXIMUM RATINGS 150 AND 200 VOLT

 9.6. Size:135K  utc
 bu407.pdf

UNISONIC TECHNOLOGIES CO., LTD BU407 NPN SILICON TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN epitaxial planar transistor, 1 designed for use in TV Horizontal output and switching applications. TO-220 FEATURES * High breakdown voltage Lead-free BU407L Halogen-free BU407G ORDERING INFORMATION Ordering Number Pin Assignment P

 9.7. Size:361K  cdil
 bu406 bu407.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BU406 BU407 UNIT Collector Emitter Voltage VCEO 200 150 V Collector Base Voltage VCBO 400 330 V VCEV Collector Emitter Volta

 9.8. Size:141K  inchange semiconductor
 bu406f bu407f.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION High Voltage Fast Switching Speed- toff= 0.75 s (Max) Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S

 9.9. Size:61K  inchange semiconductor
 bu406d bu407d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TV s and CTV s circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 moun

 9.10. Size:212K  inchange semiconductor
 bu407.pdf

isc Silicon NPN Power Transistor BU407 DESCRIPTION High Voltage V = 330V(Min) CEV Fast Switching Speed- t = 750ns(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM

 9.11. Size:211K  inchange semiconductor
 bu406fi bu407fi.pdf

isc Silicon NPN Power Transistors BU406FI/407FI DESCRIPTION High Voltage Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.12. Size:213K  inchange semiconductor
 bu407d.pdf

isc Silicon NPN Power Transistor BU407D DESCRIPTION High Voltage V = 330V(Min) CEV Fast Switching Speed- t = 0.75 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXI