BU426AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BU426AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 900 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: ISOWATT218

Búsqueda de reemplazo de transistor bipolar BU426AF

BU426AF Datasheet (PDF)

..1. Size:214K inchange semiconductor
bu426af.pdf

isc Silicon NPN Power Transistor BU426AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch-mode CTV supply systems applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

8.1. Size:216K inchange semiconductor
bu426a.pdf

isc Silicon NPN Power Transistor BU426ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch-mode CTV supply systems applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

9.1. Size:106K bourns
bu426-a.pdf

BU426, BU426ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 900 Volt Blocking CapabilityB1C 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBU426 800Collector-base voltage (IE = 0) VCBO VBU426

9.2. Size:215K inchange semiconductor
bu426.pdf

isc Silicon NPN Power Transistor BU426DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 375V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch-mode CTV supply systems applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: MMBR571LT1 | ZXTN2040F

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050