BU426AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU426AF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: ISOWATT218

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BU426AF datasheet

 ..1. Size:214K  inchange semiconductor
 bu426af.pdf pdf_icon

BU426AF

isc Silicon NPN Power Transistor BU426AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 8.1. Size:216K  inchange semiconductor
 bu426a.pdf pdf_icon

BU426AF

isc Silicon NPN Power Transistor BU426A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 9.1. Size:106K  bourns
 bu426-a.pdf pdf_icon

BU426AF

BU426, BU426A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction SOT-93 PACKAGE (TOP VIEW) 900 Volt Blocking Capability B 1 C 2 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BU426 800 Collector-base voltage (IE = 0) VCBO V BU426

 9.2. Size:215K  inchange semiconductor
 bu426.pdf pdf_icon

BU426AF

isc Silicon NPN Power Transistor BU426 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 375V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

MOSTRAR MÁS

Otros transistores... BU411, BU412, BU413, BU414, BU414B, BU415B, BU426, BU426A, S8050, BU426F, BU433, BU4508AF, BU4508AX, BU4508AZ, BU4508DF, BU4508DX, BU500