BU4508AZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU4508AZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 12

Encapsulados: SOT186A

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BU4508AZ datasheet

 ..1. Size:46K  philips
bu4508az 2.pdf pdf_icon

BU4508AZ

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load

 7.1. Size:75K  philips
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BU4508AZ

DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification June 1998 Supersedes data of January 1998 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a pl

 7.2. Size:47K  philips
bu4508ax 2.pdf pdf_icon

BU4508AZ

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector curr

 7.3. Size:214K  inchange semiconductor
bu4508ax.pdf pdf_icon

BU4508AZ

isc Silicon NPN Power Transistor BU4508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High-voltage high-speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of CTV receivers and p.c monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

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