BU505F Todos los transistores

 ..1. Size:67K  philips
 bu505f.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BU505F; BU505DF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505F; BU505DF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 packa

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 bu505f.pdf

isc Silicon NPN Power Transistor BU505F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

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 bu505 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU

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 bu505.pdf

BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS Applications ELECTRONIC BALLASTS FOR 3 FLUORESCENT LIGHTING 2 1 SWITCH MODE POWER SUPPLIES TO-220 Description The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like el

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 bu505d.pdf

isc Silicon NPN Power Transistor BU505D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

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 bu505df.pdf

isc Silicon NPN Power Transistor BU505DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.5. Size:189K  inchange semiconductor
 bu505.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU505 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA