BU505F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU505F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 1550 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 22
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BU505F
BU505F Datasheet (PDF)
bu505f.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505F; BU505DFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505F; BU505DFDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT186 packa
bu505f.pdf
isc Silicon NPN Power Transistor BU505FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505; BU505DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505; BU505DDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a TO-220ABpackage. The BU
bu505.pdf
BU505High Voltage NPN MultiepitaxialFast-Switching TransistorFeatures HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSApplications ELECTRONIC BALLASTS FOR 3FLUORESCENT LIGHTING21 SWITCH MODE POWER SUPPLIESTO-220DescriptionThe BU505 is a High Voltage NPN fastswitchingtransistor designed to be used in lightingapplication, like el
bu505d.pdf
isc Silicon NPN Power Transistor BU505DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505df.pdf
isc Silicon NPN Power Transistor BU505DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
bu505.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BU505DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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