2N323 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N323
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 18 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.5 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N323
2N323 Datasheet (PDF)
2n3232.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3232 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
2n3233.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
2n3238.pdf
isc Silicon NPN Power Transistor 2N3238DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2n3239.pdf
isc Silicon NPN Power Transistor 2N3239DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2n3235.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE
2n3236.pdf
isc Silicon NPN Power Transistor 2N3236DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2n3237.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATIN
2n3234.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3234 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(
Otros transistores... 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 , 2N3229 , 2SC828 , 2N3230 , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 , 2N3236 , 2N3237 .
