2N323 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N323
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 18 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.5 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO5
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2N323 datasheet
2n3232.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3232 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM
2n3233.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM
2n3238.pdf
isc Silicon NPN Power Transistor 2N3238 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
Otros transistores... 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 , 2N3229 , NJW0281G , 2N3230 , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 , 2N3236 , 2N3237 .
History: 2SD2064 | 2SB1017R | STA481A | 2N508 | BSP33 | 2SC4579 | 2SA99
History: 2SD2064 | 2SB1017R | STA481A | 2N508 | BSP33 | 2SC4579 | 2SA99
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