2N3230 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3230
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 3000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2N3230
2N3230 Datasheet (PDF)
2n3232.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3232 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
2n3233.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
2n3238.pdf

isc Silicon NPN Power Transistor 2N3238DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Otros transistores... 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 , 2N3229 , 2N323 , NJW0281G , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 , 2N3236 , 2N3237 , 2N3238 .



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