2N3230
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3230
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 3000
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N3230
2N3230
Datasheet (PDF)
9.2. Size:129K inchange semiconductor
2n3232.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3232 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
9.3. Size:129K inchange semiconductor
2n3233.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYM
9.4. Size:171K inchange semiconductor
2n3238.pdf
isc Silicon NPN Power Transistor 2N3238DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
9.5. Size:170K inchange semiconductor
2n3239.pdf
isc Silicon NPN Power Transistor 2N3239DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
9.6. Size:129K inchange semiconductor
2n3235.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE
9.7. Size:170K inchange semiconductor
2n3236.pdf
isc Silicon NPN Power Transistor 2N3236DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
9.8. Size:129K inchange semiconductor
2n3237.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATIN
9.9. Size:129K inchange semiconductor
2n3234.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3234 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(
Otros transistores... 2N3222
, 2N3223
, 2N3224
, 2N3225
, 2N3226
, 2N3227
, 2N3229
, 2N323
, KTB688
, 2N3231
, 2N3232
, 2N3233
, 2N3234
, 2N3235
, 2N3236
, 2N3237
, 2N3238
.
