BU526 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU526

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 86 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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BU526 datasheet

 ..1. Size:205K  inchange semiconductor
 bu526.pdf pdf_icon

BU526

isc Silicon NPN Power Transistor BU526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Collec

 ..2. Size:117K  inchange semiconductor
 bu526 bu526a.pdf pdf_icon

BU526

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=

 0.1. Size:205K  inchange semiconductor
 bu526a.pdf pdf_icon

BU526

isc Silicon NPN Power Transistor BU526A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 460V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Colle

Otros transistores... BU508DR, BU508DRF, BU508DXI, BU508FI, BU508L, BU522, BU522A, BU522B, BC558, BU526A, BU526A-4, BU526A-5, BU526A-6, BU526A-7, BU526A-8, BU536, BU546